Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

IEEE Electron Device Letters

Volumn 21, Issue 12, 2000, Pages 601-603

  Liu, C W ^a,b   Lee, M H ^a,b   Chen, Miin Jang ^a,c   Lin, Ching Fuh ^a,c   Chern, M Y ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Graudate Institute of Electronics   (Taiwan)

^c Institute of Electro Optical Engineering   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIODES; ELECTRODES; ELECTRON TUNNELING; LIGHT EMITTING DIODES; MOS DEVICES; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SILICON; SURFACE ROUGHNESS;

METAL OXIDE SILICON DIODES;

ELECTROLUMINESCENCE;

EID: 0034504101     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887479     Document Type: Article

References (13)

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