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Volumn 22, Issue 5, 1999, Pages 71-72,-74,-76
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Optimizing RTA ramp rate for ultrashallow junctions
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
BORON;
DEFECTS;
HEAT RESISTANCE;
HETEROJUNCTIONS;
ION IMPLANTATION;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON WAFERS;
TEMPERATURE;
THERMAL DIFFUSION;
THERMAL EFFECTS;
ANNEALING THERMAL BUDGET;
JUNCTION DEPTH;
RAMP UP RATE;
TRANSIENT ENHANCED DIFFUSION;
RAPID THERMAL ANNEALING;
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EID: 6544282663
PISSN: 01633767
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (8)
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References (12)
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