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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4146-4149

Influence of silicon on insulator wafer stress properties on placement accuracy of stencil masks

(9) Kamm, Frank Michael a,c Ehrmann, Albrecht b Schäfer, Herbert a Pamler, Werner b Käsmaier, Rainer a Butschke, Jörg a Springer, Reinhard a Haugeneder, Ernst b Löschner, Hans b

a INFINEON TECHNOLOGIES AG (Germany)

b Institut fur Mikroelektronik Stuttgart (Germany)

c IMS NANOFABRICATION AG (Austria)

Author keywords

Ion projection lithography; Next generation lithography; Stencil masks; Stress engineering

Indexed keywords

BONDING; ERROR ANALYSIS; FINITE ELEMENT METHOD; LITHOGRAPHY; MEMBRANES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRESS ANALYSIS;

NEXT GENERATION LITHOGRAPHY (NGL);

MASKS;

EID: 0036614057 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.4146 Document Type: Article

Times cited : (6)

References (15)

1
- 0001429836
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 3150
- Gross, G.¹ Kaesmaier, R.² Löschner, H.³ Stengl, G.⁴

2
- 0034768358
- (2001) Proc. SPIE , vol.4343 , pp. 453
- Wolter, A.¹ Käsmaier, R.² Löschner, H.³

3
- 0003111817
- VDE Verlag, Berlin
- (1998) Proc. Conf. Mask Technology for Integrated Circuits and Micro-Components, Unterhaching , pp. 29
- Butschke, J.¹ Ehrmann, A.² Irmscher, M.³ Käsmaier, R.⁴ Kragler, K.⁵ Letzkus, F.⁶ Löschner, H.⁷ Mathuni, J.⁸ Rangelow, I.W.⁹ Reuter, C.¹⁰ Shi, F.¹¹ Springer, R.¹²

4
- 0033131644
- (1999) Microelectron. Eng. , vol.46 , pp. 473
- Butschke, J.¹ Ehrmann, A.² Höfflinger, B.³ Irmscher, M.⁴ Käsmaier, R.⁵ Letzkus, F.⁶ Löschner, H.⁷ Mathuni, J.⁸ Reuter, C.⁹ Schomburg, C.¹⁰ Springer, R.¹¹

5
- 0033717847
- (2000) Proc. SPIE , vol.3997 , pp. 19
- Käsmaier, R.¹ Löschner, H.²

6
- 0033699502
- (2000) Proc. SPIE , vol.3997 , pp. 395
- Degen, A.¹ Voigt, M.² Kratzenberg, M.³ Shi, F.⁴ Butschke, J.⁵ Löschner, H.⁶ Kaesmaier, R.⁷ Ehrmann, A.⁸ Rangelow, I.W.⁹

7
- 0000150332
- (2000) J. Appl. Phys. , vol.87 , pp. 675
- Iida, T.¹ Itoh, T.² Noguchi, D.³ Takano, Y.⁴

8
- 0035130948
- (2001) Phys. Rev. B , vol.63 , pp. 035309
- Camassel, J.¹ Falkovsky, L.A.² Planes, N.³

9
- 0001719453
- (2000) J. Appl. Phys. , vol.88 , pp. 4401
- Han, W.¹ Yu, J.² Wang, Q.³

10
- 0033275698
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 3107
- Ehrmann, A.¹

11
- 0010192760
- (2001) Proc. SPIE , vol.4343 , pp. 461
- Kamm, F.-M.¹ Ehrmann, A.² Struck, T.³ Kragler, K.⁴ Butschke, J.⁵ Letzkus, F.⁶ Springer, R.⁷ Haugeneder, E.⁸

12
- 0032297420
- (1998) Proc. SPIE , vol.3546 , pp. 194
- Ehrmann, A.¹ Huber, S.² Käsmaier, R.³ Oelmann, A.⁴ Struck, T.⁵ Springer, R.⁶ Butschke, J.⁷ Letzkus, F.⁸ Kragler, K.⁹ Löschner, H.¹⁰ Rangelow, I.¹¹

13
- 0010189472
- (1999) Proc. SPIE , vol.3873 , pp. 822
- Ehrmann, A.¹ Struck, T.² Käsmaier, R.³ Haugeneder, E.⁴ Löschner, H.⁵ Butschke, J.⁶ Letzkus, F.⁷ Irmscher, M.⁸ Springer, R.⁹

14
- 0001191347
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 3436
- Puisto, D.¹ Sturans, M.² Lawliss, M.³

15
- 0000559539
- (1998) J. Vac. Sci. Technol B , vol.16 , pp. 3572
- Fisher, A.H.¹ Engelstad, R.L.² Lovell, E.G.³ Puisto, D.⁴

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