Stress engineering of SOI silicon stencil masks by boron doping concentration

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3997, Issue , 2000, Pages 395-404

  Degen, A ^a   Voigt, J ^a   Kratzenberg, M ^a   Shi, F ^a   Butschke, J ^a   Loschner, H ^a   Kaesmaier, R ^a   Ehrmann, A ^a   Rangelow, I W ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; INTEGRATED CIRCUIT MANUFACTURE; MASKS; MATHEMATICAL MODELS; MEMBRANES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRESS ANALYSIS;

ION PROJECTION LITHOGRAPHY (IPL); STENCIL MASKS; STRESS CONTROL; STRESS ENGINEERING;

ION BEAM LITHOGRAPHY;

EID: 0033699502     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (30)