Ion projection lithography: Advances with integrated tool and resist processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 453-459

  Wolter, A ^a   Kasmaier R ^a   Loschner H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Ion Projection Lithography; Next Generation Lithography; Resist Process; Vacuum Wafer Stage

Indexed keywords

ELECTRODES; ION SOURCES; MASKS; SILICON WAFERS; SUBSTRATES;

ION PROJECTION LITHOGRAPHY (IPL);

PHOTORESISTS;

EID: 0034768358     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436672     Document Type: Conference Paper

References (12)

1. Overview of the ion projection lithography European MEDEA and international program
2. Ion projection lithography: Nov00 status and sub-70nm prospects
3. Ion projection lithography: New insights and results of this NGL technology
4. Resist process development for Sub 100nm ion projection lithography
5. Chemically amplified deep ultraviolet resist for positive tone ion exposure
6. Ion projection lithography: Status of tool and mask developments
7. Progress in placement control for ion-beam stencil mask technology
8. Deep ultraviolett resists AZ DX-561 and AT DX-1300P applied for electron beam and masked ion beam lithography
9. Measuring acid generation efficiency in chemically amplified resists with all three beams
10. Masked ion beam lithography for proximity printing
11. Projection ion beam lithography
12. Minimum ion-beam exposure-dose determination for chemically amplified resist from printed dot matrices