Thermodynamic model of low temperature metalorganic chemical vapor deposition of GaN

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9091-9094

  Elyukhin, V A ^a   Garcia Salgado G ^a   Pena Sierra R ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA DECOMPOSITION; EPITAXIAL PROCESS; FORMATION CONDITION; GROWTH CONDITIONS; LOW TEMPERATURES; PHYSISORBED; PHYSISORBED STATE; THERMODYNAMIC CHARACTERISTICS; THERMODYNAMIC MODEL; WURTZITES; ZINC-BLENDE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; TEMPERATURE; VAPORS; ZINC SULFIDE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0036607408     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1457536     Document Type: Article

References (38)

1. J. J. Wierer et al., Appl. Phys. Lett. 78, 3379 (2001). apl APPLAB 0003-6951
2. Y.-K. Song, M. Diagne, H. Zhou, A. V. Nurmikko, P. R. Schneider, Jr., and T. Takeuchi, Appl. Phys. Lett. 77, 1744 (2000). apl APPLAB 0003-6951
3. N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, M. Umeno, and T. Jimbo, Appl. Phys. Lett. 76, 804 (2000). apl APPLAB 0003-6951
4. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986). apl APPLAB 0003-6951
5. L. Cheng, K. Zhou, Z. Zhang, G. Zhang, Z. Yang, and Y. Tong, Appl. Phys. Lett. 74, 661 (1999). apl APPLAB 0003-6951
6. S. Octyabrsky, K. Dovidenko, A. K. Sharma, J. Narayan, and V. Joshkin, Appl. Phys. Lett. 74, 2465 (1999). apl APPLAB 0003-6951
7. C. C. Kim, J. H. Je, M.-S. Yi, and D. Y. Noh, MRS Internet J. Nitride Semicond. Res. 5S1, W3.52 (2000). mrj MIJNF7 1092-5783
8. P. Glansdorf and I. Prigogine, Thermodynamic Theory of Structure, Stability, and Fluctuations (Wiley, New York, 1971), p. 38.
9. S. Nakamura, Jpn. J. Appl. Phys., Part 2 30, L1705 (1991). jjc JAPLD8 0021-4922
10. X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 68, 1371 (1996). apl APPLAB 0003-6951
11. X. H. Wu, P. Fini, S. Keller, E. J. Tarsa, B. Heying, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Jpn. J. Appl. Phys., Part 2 35, L1648 (1996). jjc JAPLD8 0021-4922
12. X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth 189/190, 231 (1998). jcr JCRGAE 0022-0248
13. L. Cheng, G. Zhang, D. Yu, and Z. Zhang, Appl. Phys. Lett. 70, 1408 (1997). apl APPLAB 0003-6951
14. M. S. Yi, H. H. Lee, D. J. Kim, S. J. Park, D. Y. Noh, C. C. Kim, and J. H. Je, Appl. Phys. Lett. 75, 2187 (1999). apl APPLAB 0003-6951
15. D. D. Koleske, A. E. Wickenden, R. L. Henry, W. J. DeSisto, and R. J. Gorman, J. Appl. Phys. 84, 1998 (1998). jap JAPIAU 0021-8979
16. D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twing, J. C. Culberston, and R. J. Gorman, MRS Internet J. Nitride Semicond. Res. 4S1, G3.70 (1999). mrj MIJNF7 1092-5783
17. S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, and Yu. N. Makarov, MRS Internet J. Nitride Semicond. Res. 4, 4 (1999). mrj MIJNF7 1092-5783
18. A. Koukito N. Takahashi, and H. Seki, Jpn. J. Appl. Phys., Part 2 36, L1136 (1997). jjc JAPLD8 0021-4922
19. K. Lorentz, M. Gonsalvez, W. Kim, V. Narayanan, and S. Mahajan, Appl. Phys. Lett. 77, 3391 (2000). apl APPLAB 0003-6951
20. M. Kamp, M. Mayer, A. Pelzmann, and K. J. Ebeling, Mater. Res. Soc. Symp. Proc. 449, 161 (1997). mrs MRSPDH 0272-9172
21. M. Mesrine, N. Grandjean, and J. Massies, Appl. Phys. Lett. 72, 350 (1998). apl APPLAB 0003-6951
22. A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Phys. Rev. Lett. 79, 3934 (1997). prl PRLTAO 0031-9007
23. R. Held, G. Nowak, B. E. Ishaug, S. M. Seutter, A. Parkhomovsky, A. M. Dabrian, P. I. Cohen, I. Grzegory, and S. Porowski, J. Appl. Phys. 85, 7697 (1999). jap JAPIAU 0021-8979
24. J. R. Arthur, Jr., J. Appl. Phys. 39, 4032 (1968). jap JAPIAU 0021-8979
25. O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B 54, 4432 (1996). prb PRBMDO 0163-1829
26. R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabrian, and P. I. Cohen, J. Appl. Phys. 87, 1219 (2000). jap JAPIAU 0021-8979
27. N. Grandejean, J. Massies, F. Semond, S. Yu. Karpov, and R. A. Talalaev, Appl. Phys. Lett. 74, 1854 (1999). apl APPLAB 0003-6951
28. J. Han, T.-B. Ng, R. M. Biefeld, M. H. Crawford, and D. M. Follstaedt, Appl. Phys. Lett. 71, 3114 (1997). apl APPLAB 0003-6951
29. K. R. Evans, T. Lei, and C. R. Jones, Solid-State Electron. 41, 339 (1997). sel SSELA5 0038-1101
30. M. Mesrine, N. Grandjean, and J. Massies, Appl. Phys. Lett. 72, 350 (1998). apl APPLAB 0003-6951
31. I. N. Przhevalskii, S. Yu. Karpov, and Yu. N. Makarov, MRS Internet J. Nitride Semicond. Res. 3, 30 (1998). mrj MIJNF7 1092-5783
32. P. E. Van Camp, V. E. van Doren, and J. T. Devreese, Solid State Commun. 81, 23 (1993). ssc SSCOA4 0038-1098
33. A. Munoz and K. Kunc, Phys. Rev. B 44, 10372 (1991). prb PRBMDO 0163-1829
34. B. J. Min, C. T. Chan, and K. M. Ho, Phys. Rev. B 45, 1159 (1992). prb PRBMDO 0163-1829
35. C.-Y. Yeh, Z. W. Lu, S. Froyen, and A. Zunger, Phys. Rev. B 46, 10086 (1992). prb PRBMDO 0163-1829
36. K. Karch, J.-M. Wagner, and F. Bechstedt, Phys. Rev. B 57, 7043 (1998). prb PRBMDO 0163-1829
37. A. Zoroddu, F. Bernardini, P. Ruggerone, and V. Fiorentini, Phys. Rev. B 64, 045208 (2001). prb PRBMDO 0163-1829
38. H. Jagodzinski and H. Arnold, Proceedings of the Conference on Silicon Carbide, Boston (Pergamon, New York, 1960), p. 141.