Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates

Applied Physics Letters

Volumn 74, Issue 5, 1999, Pages 661-663

  Cheng, Lisen ^a   Zhou, Kuan ^a   Zhang, Ze ^a   Zhang, Guoyi ^b   Yang, Zhijian ^b   Tong, Yuzhen ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001073986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122979     Document Type: Article

References (8)

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