Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching

Journal of Crystal Growth

Volumn 240, Issue 3-4, 2002, Pages 368-372

  Feng, G ^a   Zheng, X H ^a   Fu, Y ^a   Zhu, J J ^a   Shen, X M ^a   Zhang, B S ^a   Zhao, D G ^a   Wang, Y T ^a   Yang, H ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Etching; A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTALLOGRAPHY; ETCHING; GALLIUM NITRIDE; PLASTIC DEFORMATION; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

SELECTIVE ETCHING;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036570891     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00922-3     Document Type: Article

References (16)