Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1537-1539

  Grudowski, P A ^a   Eiting, C J ^a   Park, J ^a   Shelton, B S ^a   Lambert, D J H ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5644303598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119959     Document Type: Article

References (12)

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