Oxidation resistance of sputtered Ti1-xAlxN films for complementary metal oxide semiconductor storage node electrode barriers

Electrochemical and Solid-State Letters

Volumn 4, Issue 1, 2001, Pages

  Kim, Sam Dong ^a   Hwang, In Seok ^a   Rhee, Jin Koo ^a   Cha, Tae Ho ^a   Kim, Heon Do ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRODES; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION RESISTANCE; PHYSICAL VAPOR DEPOSITION; SPUTTERING; SURFACE TREATMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CURRENT VOLTAGE MEASUREMENT; ELECTRODE BARRIER LAYERS; PLASMA TREATMENT; RAPID THERMAL OXIDATION;

TITANIUM COMPOUNDS;

EID: 0035133479     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1344286     Document Type: Article

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