Oxidation-resistant amorphous TaN barrier for MIM-Ta2O5 capacitors in giga-bit DRAMs

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 39-40

  Nakamura, Y ^a   Asano, I ^a   Hiratani, M ^a   Saito, T ^a   Goto, H ^a  

^a Elpida Memory Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; LEAKAGE CURRENTS; TANTALUM COMPOUNDS;

CONTACT RESISTIVITY;

MIM DEVICES;

EID: 0034785082     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)