Thermal stability of a RuO2 electrode prepared by DC reactive sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 1, 2000, Pages 256-263

  Matsui, Yuichi ^a   Hiratani, Masahiko ^a   Kimura, Shinichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; FILM GROWTH; FILM PREPARATION; GIBBS FREE ENERGY; HEAT TREATMENT; INTERFACES (MATERIALS); OXIDATION; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY;

INTERNAL OXYGEN DIFFUSION; OXYGEN DIFFUSION ENHANCEMENT; RUTHENIUM OXIDES; THERMAL DESORPTION SPECTROMETRY;

RUTHENIUM COMPOUNDS;

EID: 0033875602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.39.256     Document Type: Article

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