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Volumn 15, Issue 2, 2002, Pages 169-182
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Metrology technology for the 70-nm node: Process control through amplification and averaging microscopic changes
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Author keywords
Critical dimension; Junction depth; Metrology; Thickness measurement
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
CRYSTAL DEFECTS;
DIELECTRIC MATERIALS;
LEAKAGE CURRENTS;
MICROPROCESSOR CHIPS;
PERMITTIVITY;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE TESTING;
SEMICONDUCTOR JUNCTIONS;
SEMICONDUCTOR STORAGE;
STATISTICAL PROCESS CONTROL;
THICKNESS MEASUREMENT;
CRITICAL DIMENSION (CD) MEASUREMENTS;
DEFECT DETECTION;
SILICON WAFERS;
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EID: 0036565026
PISSN: 08946507
EISSN: None
Source Type: Journal
DOI: 10.1109/66.999588 Document Type: Review |
Times cited : (4)
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References (40)
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