Characterization and production metrology of thin transistor gate dielectric films

Solid State Phenomena

Volumn 76-77, Issue , 2001, Pages 177-180

  Chism, William ^a   Diebold, Alain ^a   Canterbury, Jesse ^a   Richter, Curt ^b  

^a SEMATECH   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Dispersion models; Ellipsometry; Gate dielectrics

Indexed keywords

DISPERSIONS; ELLIPSOMETRY; GATE DIELECTRICS; HIGH-K DIELECTRIC; SPECTROSCOPIC ELLIPSOMETRY; THIN FILM CIRCUITS; ZIRCONIA;

DISPERSION MODELS; MATERIAL COMPOSITIONS; NITROGEN CONTENT; OPTICAL DISPERSION; OPTICAL MODELS; OXYNITRIDES; PRODUCTION METROLOGY; ZIRCONIUM DIOXIDE;

DIELECTRIC MATERIALS;

EID: 4243869688     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.76-77.177     Document Type: Conference Paper

References (7)

1. International Technology Roadmap for Semiconductors: 1999, Semiconductor Industry Association (1999).
2. E.P. Gusev, et al, J. Appl. Phys. 84, 2980 (1998).
3. J. Tauc, et al, Phys. Stat. Sol. 15, 627 (1966).
4. G.E. Jellison and F.A. Modine, Appl. Phys. Lett. 69, 371 (& 2137) (1996).
5. A.S. Ferlauto, et al, J. Non-Cryst. Solids, 260, 269 (2000).
6. C.M. Herzinger, et al, J. App. Phys. 83, 3323 (1998).
7. H.G. Tompkins, et al, J. Vac. Sci. Tech. A 17, 391 (1999).