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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1998-2004

Observation of barrier recrystallization process and properties of ramp-edge Josephson junctions with interface-modified barrier

(8) Ishimaru, Yoshihiro a,b Wu, Yuan a Horibe, Osami a Tano, Hiroyoshi a Suzuki, Toshiaki a Tarutani, Yoshinobu a Kawabe, Ushio a Tanabe, Keiichi a

a SUPERCONDUCTIVITY RESEARCH LABORATORY (Japan)

b CHIBA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Interface modified barrier; Josephson junction; Ramp edge; RHEED; TEM

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; MICROSTRUCTURE; RECRYSTALLIZATION (METALLURGY); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM BARIUM COPPER OXIDES;

INTERFACE-MODIFIED BARRIER; ION ACCELERATION VOLTAGE; RAMP-EDGE JOSEPHSON JUNCTION;

JOSEPHSON JUNCTION DEVICES;

EID: 0036529208 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1998 Document Type: Article

Times cited : (23)

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