Investigation of ramp-type Josephson junctions with surface-modified barriers

IEEE Transactions on Applied Superconductivity

Volumn 11, Issue 1 I, 2001, Pages 163-166

  Soutome, Y ^a   Hanson, R ^a,b   Fukazawa, T ^a   Saitoh, K ^a   Tsukamoto, A ^a   Tarutani, Y ^a,c   Takagi, K ^a  

^a HITACHI LTD   (Japan)

^b LEIDEN UNIVERSITY   (Netherlands)

^c SUPERCONDUCTIVITY RESEARCH LABORATORY   (Japan)

Author keywords

Barrier thickness; Dielectric constant; High temperature superconductor; Interface engineered junction; McCumber parameter; Ramp edge

Indexed keywords

RAMP-TYPE JOSEPHSON JUNCTIONS; STRAY CAPACITANCE; SURFACE MODIFIED BARRIERS;

CAPACITANCE; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE SUPERCONDUCTORS; INTERFACES (MATERIALS); IRRADIATION; PERMITTIVITY; REACTIVE ION ETCHING; SURFACE TREATMENT;

JOSEPHSON JUNCTION DEVICES;

EID: 0035268734     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.919310     Document Type: Conference Paper

References (11)

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6. New substrate for HTSC microwave devices
7. 2: An alternative insulator material for superconducting field effect devices
8. Analysis of the surface-modified barrier in YBaCuO ramp-edge Josephson junctions
9. y toward the insulator-metal transition
10. 7-δ barriers