Fabrication of ramp-edge junction with NdBa2Cu3Oy-based interface-modified barrier

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 7, 2000, Pages

  Makita, Takehiko ^a   Toma, Kazuyoshi ^a   Ishikawa, Kazuhiro ^a   Zama, Hideaki ^a   Tano, Hiroyoshi ^a   Tanabe, Keiichi ^a  

^a SUPERCONDUCTIVITY RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL MODIFICATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; ETCHING; INTERFACES (MATERIALS); NEODYMIUM COMPOUNDS; OXIDE SUPERCONDUCTORS; SEMICONDUCTING FILMS; THERMAL EFFECTS; YTTRIUM BARIUM COPPER OXIDES;

COUNTER ELECTRODE; COUNTER ELECTRODE GROWTH; ELECTRON CYCLOTRON RESONANCE ION ETCHING; INTERFACE MODIFIED BARRIER; NEODYMIUM BARIUM COPPER OXIDE; RAMP EDGE JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033632820     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l730     Document Type: Article

References (11)