Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 741-746

  Duhayon, N ^a,b   Clarysse, T ^a   Eyben, P ^a,b   Vandervorst, W ^a,b   Hellemans, L ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CARRIER CONCENTRATION; GRAIN SIZE AND SHAPE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

SCANNING CAPACITANCE MICROSCOPY (SCM); SPREADING RESISTANCE PROFILING (SRP);

SEMICONDUCTOR JUNCTIONS;

EID: 0036504606     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1464834     Document Type: Article

References (23)