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Volumn 17, Issue 6, 1999, Pages 3158-3163
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Progress toward a 30 nm silicon metal-oxide-semiconductor gate technology
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0033260768
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.590972 Document Type: Article |
Times cited : (10)
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References (15)
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