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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 949-952

Self-organized InGaAs quantum dots for advanced applications in optoelectronics

(5) Ledentsov, Nikolai N a,b Bimberg, Dieter a Ustinov, Victor M b Alferov, Zhores I b Lott, James A c

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b IOFFE INSTITUTE (Russian Federation)

c AIR FORCE INSTITUTE OF TECHNOLOGY (United States)

Author keywords

InGaAs; Laser diode; MBE; Quantum dot; VCSEL

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTOELECTRONIC DEVICES; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM DOT LASERS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036478757 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.949 Document Type: Conference Paper

Times cited : (20)

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