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Volumn 30, Issue 5, 2001, Pages 463-470

Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

(14) Ledentsov, N N a Litvinov, D b Rosenauer, A b Gerthsen, D b Soshnikov, I P c Shchukin, V A a Ustinov, V M c Egorov, A Y c Zukov, A E c Volodin, V A d Efremov, M D d Preobrazhenskii, V V d Semyagin, B P d Bimberg, D a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b UNIVERSITY OF KARLSRUHE (Germany)

c IOFFE INSTITUTE (Russian Federation)

d INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

(311)A GaAs surface; Corrugated superlattices; Quantum dots

Indexed keywords

DEPOSITION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SUPERLATTICES; SURFACE PHENOMENA; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM ARSENIDE; CORRUGATED SURFACES; GROWTH MODE; INTERFACE STRUCTURE; LATERAL PERIODICITIES; THICKNESS MODULATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 20244387814 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0084-1 Document Type: Article

Times cited : (24)

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