Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 8, 2000, Pages 4733-4737

  Chen, Chi Chun ^a   Lin, Horng Chih ^b   Chang, Chun Yen ^a   Chao, Tien Sheng ^b   Huang, Tiao Yuan ^a,b   Liang, Mong Song ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; NITROGEN OXIDES; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING;

GATE-OXIDE INTEGRITY;

TITANIUM NITRIDE;

EID: 0034244705     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4733     Document Type: Article

References (14)

1. B. Yu, D. H. Ju, N. Kepler, T. J. King and C. Hu: Symp. VLSL Technol. Dig. Tech. (1997) p. 105.
2. A. Chatterjee et al:. IEDM Tech. Dig. (1997) p. 821.
3. H. Yang, G. A. Brown, J. C. Hu, J. P. Lu, R. Kraft, A. L. P. Rotondaro, S. V. Hattangady, I.-C. Chen, J. D. Luttmer, R. A. Chapman, P. J. Chen, H. L. Tsai, B. Amirhekmat and L. K. Magel: IEDM Tech. Dig. (1997) p. 459.
4. J. C. Hu, H. Yang, R. Kraft, A. L. P. Rotondaro, S. Hattangady, W. W. Lee, R. A. Chapman, C. P. Chao, A. Chatterjee, M. Hanratty, M. Rodder and I. C. Chen: IEDM Tech. Dig. (1997) p. 825.
5. B. Maiti, P. J. Tobin, C. Hobbs, R. I. Hegde, F. Huang, D. L. O'Meara, D. Jovanovic, M. Mendicino, J. Chen, D. Connelly, O. Adetutu, J. Mogab, J. Candelaria and L. B. La: IEDM Tech. Dig. (1998) p. 781.
6. A. Yagishita, T. Saito, K. Nakajama, S. Inumiya, Y. Akasaka, Y. Ozawa, G. Minamihaba, H. Yano, K. Hieda, K. Suguro, T. Arikado and K. Okumura: IEDM Tech. Dig. (1998) p. 785.
7. T. Yamada, M. Moriwaki, Y. Harada, S. Fujii and K. Eriguchi: IEDM Tech. Dig. (1999) p. 319
8. K. Nakajima, Y. Aakasaka, M. Kaneko, M. Tamaoki, Y. Yamada, T. Shimizu, Y. Ozawa and K. Suguro: Symp. VLSI Technol. Dig. Tech. (1999) p. 95.
9. A. Yagishita, T. Saito, K. Nakajima, K. Matsuo, Y. Akasaka, Y. Ozawa, H. Yano, G. Minanihaba, Y. Matsui, Y. Tsunashima, K. Suguro, T. Arikado and K. Okumura: IEDM Tech. Dig. (1999) p. 257.
10. H. Wakabayashi, Y. Saito, K. Takeuchi, T. Mogami and T. Kunio: IEDM Tech. Dig. (1999) p. 253.
11. E. Josse and T. Skotnicki: IEDM Tech. Dig. (1999) p. 661.
12. C.-C. Chen, H.-C. Lin, C.-Y. Chang, M.-S. Liang, C.-H. Chien, S.-K. Hsien and T.-Y. Huang: IEEE Electron Device Lett. 21 (2000) 15.
13. H.-C. Lin, M.-F. Wang, C.-C. Chen, S.-K. Hsien, C.-H. Chien, T.-Y. Huang, C.-Y. Chang and T.-S. Chao: IEEE Int. Reliability Physical Symp. (1998) p. 312.
14. C.-C. Chen, H.-C. Lin, C.-Y. Chang, T.-Y. Huang, C.-H. Chien and M.-S. Liang: Electrochem. & Solid-State Lett. 3 (2000) p. 103.