Slight gate oxide thickness increase in PMOS devices with BF 2 implanted polysilicon gate

IEEE Electron Device Letters

Volumn 19, Issue 9, 1998, Pages 348-350

  Tsai, Jiunn Yann ^a,b   Shi, Ying ^a,b   Prasad, Sharad ^a,b   Yeh, Stanley W C ^a,b   Rakkhit, Rajat ^a,b  

^a IEEE   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

Fluorinated oxide; Quantum effect; Thin gate oxide

Indexed keywords

ANNEALING; BORON COMPOUNDS; GATES (TRANSISTOR); ION IMPLANTATION; THERMAL EFFECTS;

BORON FLUORIDE; QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 0032164791     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.709640     Document Type: Article

References (7)

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