Void nucleation in metal interconnects: combined effects of interface flaws and crystallographic slip

Journal of Materials Research

Volumn 14, Issue 2, 1999, Pages 584-591

  Shen, Y L ^a  

^a University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; DIELECTRIC MATERIALS; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MATHEMATICAL MODELS; STRAIN; STRESSES; THIN FILMS;

CRYSTALLOGRAPHIC SLIP; INTERFACE FLAWS; METAL INTERCONNECTS; MICROMECHANICAL MODEL; VOID NUCLEATION;

NUCLEATION;

EID: 0033077276     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0083     Document Type: Article

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