Hole and interface traps in Mg-doped Al0.1Ga0.9N/GaN grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 1, 2002, Pages 197-201

  Cho, Hyun Kyong ^a   Hong, Chang Hee ^a   Suh, Eun Kyung ^a   Lee, Hyung Jae ^a  

^a Chonbuk National University   (South Korea)

Author keywords

AlGaN; Deep level; DLTS; Interface trap; Mg; MOCVD

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; GALLIUM NITRIDE; HETEROJUNCTIONS; HOLE TRAPS; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DEEP LEVEL TRAPS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036314472     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.197     Document Type: Article

References (19)