Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped GaN

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 48-54

  Garter, Michael J ^b   Steckl, Andrew J ^a,b  

^a IEEE   (United States)

^b University of Cincinnati   (United States)

Author keywords

Electroluminescence; Er; GaN; ITO; Temperature dependence

Indexed keywords

ELECTRIC FIELD INTENSITY; INDIUM TIN OXIDE; TEMPERATURE DEPENDENCE;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ERBIUM; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TEMPERATURE;

LUMINESCENT DEVICES;

EID: 0036247618     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974748     Document Type: Article

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