Electroluminescence from forward-biased Er-doped GaP p-n junctions at room temperature

Applied Physics Letters

Volumn 68, Issue 8, 1996, Pages 1126-1128

  Ford, G M ^a   Wessels, B W ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTROLUMINESCENCE; ERBIUM; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; ZINC;

GALLIUM PHOSPHIDE; LUMINESCENCE EXCITATION; LUMINESCENCE INTENSITY; THERMAL QUENCHING;

LIGHT EMITTING DIODES;

EID: 0030082160     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115734     Document Type: Article

References (9)

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