Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1023-1025

  Du, Chun Xia ^a,b   Ni, Wei Xin ^a   Joelsson, Kenneth B ^a   Hansson, Göran V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001572697     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119715     Document Type: Article

References (11)

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