Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon p-n junction

Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1223-1225

  Emel'yanov, A M ^a   Sobolev, N A ^b   Yakimenko, A N ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000085189     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121020     Document Type: Article

References (7)

1. G. Franzo, S. Coffa, and F. Priolo, J. Appl. Phys. 81, 2784 (1997).
2. J. Stimmer, A. Reittinger, J. F. Nutzel, G. Abstreiter, H. Holzbreher, and Ch. Buchal, Appl. Phys. Lett. 68, 3290 (1996).
3. M. Matsuoka and S. Tohno, Appl. Phys. Lett. 71, 96 (1997).
4. N. A. Sobolev, A. M. Emel'yanov, and K. F. Shtel'makh, Appl. Phys. Lett. 71, 1930 (1997).
5. N. A. Sobolev, A. M. Emel'yanov, Yu. A. Nikolaev, K. F. Shtel'makh, Yu. A. Kudryavtsev, V. I. Sakharov, I. T. Serenkov, M. I. Makovijchuk, and E. O. Parshin, Materials Science Forum (Proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, 21-25 July 1997) (in press).
6. A. G. Chynoweth and K. G. McKay, Phys. Rev. 102, 369 (1956).
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).