|
|
Volumn 20, Issue 1, 2002, Pages 60-67
|
|
Morphological transition of Si1-xGex films growing on Si(100). II. Synchrotron-radiation-excited chemical-vapor deposition: From two-dimensional growth to growth in the Volmer-Weber mode
a
a
NTT CORPORATION
(Japan)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
ELLIPSOMETRY;
FILM GROWTH;
MORPHOLOGY;
PHASE TRANSITIONS;
PHOTOLYSIS;
SEMICONDUCTING SILICON;
SPECTROSCOPIC ANALYSIS;
SURFACE ACTIVE AGENTS;
SYNCHROTRON RADIATION;
WETTING;
HIGH ENERGY PHOTONS;
MORPHOLOGICAL TRANSITION;
SILICON GERMINIDE;
SPECTROSCOPIC ELLIPSOMETRY;
VOLMER-WEBER MODE;
SEMICONDUCTING SILICON COMPOUNDS;
|
|
EID: 0036166777
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1421601 Document Type: Article |
|
Times cited : (5)
|
|
References (21)
|
