Formation of a transient si hydride multilayer and recrystallization of a si-si network during vacuum-ultraviolet-excited si homoepitaxy from (formula presented)

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 4, 1999, Pages 3184-3194

  Akazawa, Housei ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001269922     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.3184     Document Type: Article

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