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Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 349-353

The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM

(5) Okada, Masahisa a Shimizu, Takaya a Ikeda, Hiroya a Zaima, Shigeaki a Yasuda, Yukio a

a NAGOYA UNIVERSITY (Japan)

Author keywords

Atomic hydrogen; Germanium on silicon; MBE; Scanning tunneling microscopy (STM)

Indexed keywords

ATOMS; CHEMICAL BONDS; DIFFUSION; HYDROGEN; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

ADATOMS; SOLID SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GERMANIUM;

EID: 0031547175 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00777-5 Document Type: Article

Times cited : (10)

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