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Volumn 130-132, Issue , 1998, Pages 292-297
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Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100)
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS MATERIALS;
CHEMICAL VAPOR DEPOSITION;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
FILM GROWTH;
MORPHOLOGY;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
STACKING FAULTS;
STRAIN;
SURFACE ACTIVE AGENTS;
VACUUM ULTRAVIOLET EXCITED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING GERMANIUM;
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EID: 17544387929
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(98)00073-7 Document Type: Article |
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Times cited : (1)
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References (11)
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