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Volumn 150, Issue , 1995, Pages 939-943
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Suppression of Ge surface segregation during Si molecular beam epitaxy by atomic and molecular hydrogen irradiation
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMS;
DISSOCIATION;
GERMANIUM;
HYDROGEN;
IRRADIATION;
MOLECULES;
SEGREGATION (METALLOGRAPHY);
SILICON;
SUBSTRATES;
SURFACES;
ATOMIC HYDROGEN;
MOLECULAR HYDROGEN;
SURFACE MIGRATION;
MOLECULAR BEAM EPITAXY;
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EID: 0029305930
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)80078-Q Document Type: Article |
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Times cited : (24)
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References (9)
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