Formation and decomposition of a Si hydride layer during vacuum ultraviolet-excited Si homoepitaxy from disilane

Surface Science

Volumn 427-428, Issue , 1999, Pages 214-218

  Akazawa, Housei ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DIELECTRIC PROPERTIES; ELLIPSOMETRY; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; PHOTOLYSIS; SILANES; SPECTROSCOPY; SURFACES;

LOW INDEX SINGLE CRYSTAL SURFACE; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0033149524     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00267-8     Document Type: Article

References (13)

1. Azzam R.M.A., Bashara N.M. Ellipsometry and Polarized Light. 1986;North-Holland, Amsterdam.
2. Akazawa H. Appl. Phys. Lett. 70:1997;3528.
3. Akazawa H., Utsumi Y. J. Appl. Phys. 78:1995;2740.
4. Akazawa H., Takahashi J. Rev. Sci. Instrum. 69:1998;265.
5. Akazawa H. Thin Solid Films. 313/314:1998;430.
6. An I., Collins R.W., Nguyen H.V., Vedam K., Witham H.S., Messier R. Thin Solid Films. 233:1993;276.
7. Miyazaki S., Shin H., Miyoshi Y., Hirose M. Jpn. J. Appl. Phys. 34:1995;787.
8. Yoshigoe A., Nagasono M., Mase K., Urisu T. Jpn. J. Appl. Phys. 34:1995;6894.
9. Akazawa H. Phys. Rev. B. 51:1995;7314.
10. Akazawa H. Nucl. Instrum Meth. B. 101:1995;227.
11. Flowers M.C., Jonathan N.B.H., Liu Y., Morris A. J. Chem. Phys. 99:1993;7038.
12. Isobe C., Cho H.-C., Crowell J.E. Surf. Sci. 295:1993;99.
13. Koleske D.D. Gates S.M. Appl. Phys. Lett. 64:1994;3569.