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Journal of Crystal Growth

Volumn 169, Issue 3, 1996, Pages 450-456

Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy

(7) Bignazzi, A a Grilli, E a Guzzi, M a Radice, M a Bosacchi, A b Franchi, S b Magnanini, R c

a UNIVERSITY OF MILAN (Italy)

b CNR (Italy)

c UNIVERSITY OF PARMA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING;

BAND FILLING EFFECTS; NATIVE DOUBLE ACCEPTOR DEFECT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030420229 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00441-1 Document Type: Article

Times cited : (13)

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