Characterization and simulation of GaSb device-related properties

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 448-457

  Stollwerck, Gunther ^a,b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; ENERGY GAP; MATHEMATICAL MODELS; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY;

GALLIUM ANTIMONIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033882476     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822293     Document Type: Article

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