Photoluminescence characterization of sulphur-doped GaSb grown by liquid phase electroepitaxy

Journal of Crystal Growth

Volumn 158, Issue 1-2, 1996, Pages 1-5

  Novak J ^a   Kucera M ^a   Lauer, S ^b   Benz, K W ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; PHOTOLUMINESCENCE; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SULFUR;

ACCEPTOR-RELATED TRANSITION; PHOTOREFLECTANCE;

LIQUID PHASE EPITAXY;

EID: 0029734001     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00343-6     Document Type: Article

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