Electrical transport properties of GaSb grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1704-1708

  Zhao, G Y ^a   Ebisu, Hirosh ^a   Soga, Tetsuo ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Compensation ratio; Hall factor; Hall mobility; Hopping conductivity

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSPORT PROPERTIES;

COMPENSATION RATIO; GALLIUM ANTIMONIDE; HALL FACTOR; HALL MOBILITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032046672     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1704     Document Type: Article

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