p-type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source

Applied Physics Letters

Volumn 69, Issue 25, 1996, Pages 3863-3865

  Ehsani, H ^a   Bhat, I ^a   Gutmann, R ^a   Charache, G ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001179444     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117130     Document Type: Article

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