Defect engineering and prevention of impurity gettering at Rp/2 in ion-implanted silicon

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 399-404

  Kogler R ^a   Peeva, A ^a   Kaschny, J ^a   Skorupa, W ^a   Hutter, H ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Cu; Defect engineering; Ion implantation; Si

Indexed keywords

ANNEALING; DEFECTS; ION IMPLANTATION; MATHEMATICAL MODELS; TRANSMISSION ELECTRON MICROSCOPY;

CLEAVAGE TECHNIQUE; DEFECT ENGINEERING; GETTERING;

SEMICONDUCTING SILICON;

EID: 0036129780     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (18)