Electromigration study of Cu/low k dual-damascene interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 322-326

  Lee, K D ^a   Lu, X ^a   Ogawa, E T ^a   Matsuhashi, H ^a   Ho, P S ^a   Blaschke, V A ^b   Augur, R ^b  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

Critical length effect; Cu interconnect; Dual damascene; Electromigration; Interconnect; Interconnect reliability; Low k; Reliability

Indexed keywords

ACTIVATION ENERGY; ADHESION; COPPER; DEGRADATION; DIFFUSION; ELECTROMIGRATION; HEAT RESISTANCE; INTERFACES (MATERIALS); MASS TRANSFER; PERMITTIVITY; THERMAL EFFECTS; THERMOMECHANICAL TREATMENT;

INTERLEVEL DIELECTRICS (ILD);

ELECTRIC CONNECTORS;

EID: 0036088530     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996655     Document Type: Article

References (19)

1. Electromigration reliability of dual-damascene Cu/oxide interconnects
2. Statistics of electromigration early failures in Cu/oxide dual-damascene interconnects