Laser interferometry as a diagnostic tool for the fabrication of reactive ion etching-edge-emitting lasers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 1994-1999

  Aperathitis, E ^a   Hatzopoulos, Z ^a   Georgakilas, A ^a   Richeboeuf, L ^b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b Horiba Jobin Yvon   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; LASER BEAMS; MIRRORS; MORPHOLOGY; OPTICAL WAVEGUIDES; PHOTODETECTORS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

DRY ETCHING PROCESS; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING; LASER INTERFEROMETRY; STANDARD CONTACT PHOTOLITHOGRAPHY;

INTERFEROMETRY;

EID: 0036026373     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1505960     Document Type: Article

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