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Volumn 38, Issue 18, 1988, Pages 12966-12976

Model dielectric constants of Si and Ge

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EID: 35949008929     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.38.12966     Document Type: Article
Times cited : (198)

References (125)
  • 119
    • 84926865305 scopus 로고    scopus 로고
    • The band-structure calculation of Chelikowsky and Cohen (Ref. 52) for InP suggests four CP's in the (4.5-5.5)-eV energy region. Two of them correspond to transitions at the GAMMA point [ Γ8v -> Γ7c at 4.64 eV and Γ8v -> Γ8c at 5.13 eV (Ref. 18)], and they are labeled E0sprime and E0sprime + Δ0sprime. In earlier work (Ref. 62), these transitions were attributed to an E2 CP. The E2 transitions occur in the region near the E0sprime and E0sprime + Δ0sprime CP's, but their strength is weaker than that of the E0sprime and E0sprime + Δ0sprime transitions. Thus, it is worth noting that in InP the strength of the E0sprime and E0sprime + Δ0sprime transitions is relatively strong and dominant enough in optical spectra (see, e.g., Ref. 18).
  • 120
    • 84926799929 scopus 로고    scopus 로고
    • The E0sprime (triplet) CP's would have a 3D M0 character. We also treated their structures in Ge as the 3D M0 type [i.e., Eqs. (2) and (3)]. However, this treatment led to a poorer fit with the experimental data than that using the DHO. This fact may be due to the multitude of possible CP's in the E0sprime spectral region, which may give rise to an averaging over several CP's.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.