III-V material and device aspects for the monolithic integration of GaAs devices on Si using GaAs/Si low temperature wafer bonding

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2001, Pages 239-244

  Georgakilas, A ^a   Alexe, M ^a   Deligeorgis, G ^a   Cengher, D ^a   Aperathitis, E ^a   Androulidaki, M ^a   Gallis, S ^a   Hatzopoulos, Z ^a   Halkias, G ^a  

^a UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; WSI CIRCUITS;

WAFER BONDING;

OPTOELECTRONIC DEVICES;

EID: 0035744111     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)