Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 193-196

  Hatzopoulos, Z ^a,b   Cengher, D ^a,b   Deligeorgis, G ^a,b   Androulidaki, M ^a,b   Aperathitis, E ^a,b   Halkias, G ^c   Georgakilas, A ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting gallium arsenide; B3. Heterojunction semiconductor devices; B3. Laser diodes

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SILICON WAFERS;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035399349     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00661-3     Document Type: Conference Paper

References (7)