Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 77-80

  Aperathitis, E ^a   Cengher, D ^a   Kayambaki, M ^a   Androulidaki, M ^a   Deligeorgis, G ^a,b   Tsagaraki, K ^a   Hatzopoulos, Z ^a,b   Georgakilas, A ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

Author keywords

End point detection; Laser diodes; Multiple quantum wells; Optical interconnects; Reactive ion etching

Indexed keywords

CURRENT DENSITY; INTERFEROMETRY; OPTICAL INTERCONNECTS; PHOTODETECTORS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; LASER MIRROR ETCHING;

INTEGRATED OPTOELECTRONICS;

EID: 0035932238     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00593-6     Document Type: Article

References (9)