Evaluation of performance capabilities of emitters and detectors based on a common MQW structure

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 241-244

  Cengher, D ^a,c   Aperathitis, E ^a   Androulidaki, M ^a   Deligeorgis, G ^a   Kayambaki, M ^a   Michelakis, K ^a   Hatzopoulos, Z ^a,b   Tzanetakis, P ^a,b   Georgakilas, A ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

GaAs AlGaAs; Integration; Optoelectronic circuits; Photodetectors; Photonic integrated circuits; Semiconductor laser

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; INTEGRATED OPTOELECTRONICS; LIGHT ABSORPTION; MATRIX ALGEBRA; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

ALUMINUM GALLIUM ARSENIDE; PHOTONIC INTEGRATED CIRCUITS; TRANSFER MATRIX METHOD;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035932225     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00614-0     Document Type: Article

References (6)