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Volumn 11, Issue 8, 1999, Pages 943-945

Edge-emitting GaInAs-AlGaAs microlasers

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; DIFFRACTION GRATINGS; ELECTRIC CURRENTS; INTEGRATED OPTOELECTRONICS; LIGHT EMISSION; MIRRORS; REACTIVE ION ETCHING; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037783306     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.775307     Document Type: Article
Times cited : (46)

References (13)
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  • 8
    • 0032650207 scopus 로고    scopus 로고
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    • (1999) Electron. Lett. , vol.35 , Issue.2 , pp. 154-155
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  • 9
    • 0032538716 scopus 로고    scopus 로고
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    • F. Schäfer, B. Mayer, J. P. Reithmaier, and A. Forchel, "High temperature properties of GaInAs/AlGaAs-lasers with improved carrier confinement by short period superlattice quantum well barriers," Appl. Phys. Lett., vol. 73, no. 20, pp. 2863-2865, 1998.
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  • 10
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    • July
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  • 12
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.