InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 91-94

  Edwards, P R ^a   Martin, R W ^a   Kim, H S ^a   Kim, K S ^a   Cho, Y ^b   Watson, I M ^a   Sands, T ^b   Cheung, N W ^b   Dawson, M D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541055     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<91::AID-PSSB91>3.0.CO;2-D     Document Type: Article

References (10)

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